(China (Mainland))
Product Summary
The FQL40N50 is N-Channel enhancement mode power field effect transistors. This transistor is produced using Fairchild’s proprietary, planar stripe, DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the valanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, motor drive and welding machine.
Parametrics
Absolute maximum ratings:(1)Drain-Source Voltage,VDSS: 500 V; (2)Drain Current - Continuous (TC = 25°C), ID: 40 A; (3)Drain Current- Continuous (TC = 100°C), ID: 25 A; (4)Drain Current - Pulsed, IDM: 160 A; (5)Gate-Source Voltage, VGSS: ± 30 V; (6)Single Pulsed Avalanche Energy (Note 2), EAS: 1780 mJ; (7)Avalanche Current (Note 1), IAR: 40 A; (8)Repetitive Avalanche Energy (Note 1), EAR: 46 mJ; (9)Peak Diode Recovery dv/dt (Note 3), dv/dt: 4.5 V/ns; (10)Power Dissipation (TC = 25°C), PD: 460 W; (11)Power Dissipation , Derate above 25°C, PD: 3.7 W/°C; (12)Operating and Storage Temperature Range, TJ, TSTG: -55 to +150 °C; (13)Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds, TL:300 °C.
Features
Features:(1)40A, 500V, RDS(on) = 0.11Ω @VGS = 10 V; (2)Low gate charge ( typical 155 nC); (3)Low Crss ( typical 95 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
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 FQL40N50 |
Fairchild Semiconductor |
MOSFET 500V N-Channel QFET |
Data Sheet |
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FQL40N50F |
Fairchild Semiconductor |
MOSFET 500V N-Channel FRFET |
Data Sheet |
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