Product Summary

The M25P16-VME6TG is a 16Mbit (2M x 8) Serial Flash Memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. It is organized as 32 sectors, each containing 256 pages. Each page is 256 bytes wide. Thus, the whole memory can be viewed as consisting of 8192 pages, or 2,097,152 bytes. The whole memory can be erased using the Bulk Erase instruction, or a sector at a time, using the Sector Erase instruction.

Parametrics

Absolute maximum ratings: (1)TSTG, Storage Temperature: –65 to 150 °C; (2)TLEAD, Lead Temperature during Soldering: See note 1 °C; (3)VIO, Input and Output Voltage (with respect to Ground): –0.6 to 4.0 V; (4)VCC, Supply Voltage: –0.6 to 4.0 V; (5)VESD, Electrostatic Discharge Voltage (Human Body model): –2000 to 2000 V.

Features

Features: (1)16Mbit of Flash Memory; (2)Page Program (up to 256 Bytes) in 1.4ms (typical); (3)Sector Erase (512 Kbit); (4)Bulk Erase (16Mbit); (5)2.7 to 3.6V Single Supply Voltage; (6)SPI Bus Compatible Serial Interface; (7)50MHz Clock Rate (maximum); (8)Deep Power-down Mode 1μA (typical); (9)Electronic Signatures: JEDEC Standard Two-Byte Signature(2015h); RES Instruction, One-Byte, Signature(14h), for backward compatibility; (10)More than 100,000 Erase/Program Cycles per Sector; (11)More than 20 Year Data Retention.

Diagrams

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