Product Summary

The M25PE16-VMW6TG is a 16 Mbit (2 Mb × 8) Serial Paged Flash memory accessed by a high speed SPI-compatible bus. The memory can be written or programmed 1 to 256 Bytes at a time, using the Page Write or Page Program instruction. The Page Write instruction consists of an integrated Page Erase cycle followed by a Page Program cycle. The M25PE16-VMW6TG is organized as 32 sectors that are further divided up into 16 subsectors each (512 subsectors in total). It can be erased a page at a time, using the Page Erase instruction, a subsector at a time, using the SubSector Erase instruction, a sector at a time, using the Sector Erase instruction, or as a whole, using the Bulk Erase instruction.

Parametrics

Absolute maximum ratings:(1)Storage temperature: -65 to 150 °C;(2)Lead temperature during soldering: -;(3)Input and output voltage (with respect to ground): -0.6 to VCC+0.6 V;(4)Supply voltage: -0.6 to 4.0 V;(5)Fast program/erase voltage: -0.2 to 10.0 V;(6)Electrostatic discharge voltage (human body model): -2000 to 2000 V.

Features

Features: (1)SPI bus compatible serial interface; (2)75 MHz (maximum) clock frequency; (3)2.7 V to 3.6 V single supply voltage; (4)Additional 64-byte user-lockable, one-time programmable (OTP) area; (5)Deep power-down mode: 5 μA (typical); (6)More than 100 000 write cycles per sector; (7)More than 20 years data retention; (8)Dual input/output instructions resulting in an equivalent clock frequency of 150 MHz: Dual output fast read instruction and Dual input fast program instruction.

Diagrams

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